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Intel Corporation’s new 45nm Penryn microprocessor relies the element Hafnium and metal gate technology to increase performance and significantly reduce eco-unfriendly, wasteful electricity leaks.

In recognition of the 45nm technology (but also for the innovation that will allow Intel to continue doubling, and doubling and doubling every two years), Penryn has already joined Apple’s iPhone and other game-changing gadgets as a member of the elite group of Time Magazine’s Best Inventions of the Year, and just today, Dean Takahashi said, “Intel is about to hit one out of the park.”


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